Search results for "ion irradiation"
showing 10 items of 15 documents
Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions
2008
Heavy-ion irradiation of NAND flash memories under operating conditions leads to errors with complex, data-dependent signatures. We present upsets due to hits in the floating gate array and in the peripheral circuitry, discussing their peculiarities in terms of pattern dependence and annealing. We also illustrate single event functional interruptions, which lead to errors during erase and program operations. To account for all the phenomena we observe during and after irradiation, we propose an ldquoeffective cross section,rdquo which takes into account the array and peripheral circuitry contributions to the SEU sensitivity, as well as the operating conditions.
Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
2022
The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. The results were comparable, although the data may indicate a marginally lower thresholds for the isotopic enriched devices at lower linear energy transfer (LET). Slightly higher reverse bias threshold values for leakage current degradation were also observed compared to previously published work.
Influence of MeV H+ ion beam flux on cross-linking and blister formation in PMMA resist
2012
In soft lithography, a pattern is produced in poly(dimethylsiloxane) (PDMS) elastomer by casting from a master mould. The mould can be made of poly(methylmethacrylate) (PMMA) resist by utilising either its positive or negative tone induced by an ion beam. Here we have investigated the irradiation conditions for achieving complete cross-linking and absence of blister formation in PMMA so that its negative characteristic can be used in making master moulds. PMMA thin films approximately 9 µm thick on Si were deposited by spin coating. The 2-MeV H+ ion beam was generated using a 1.7-MV tandem Tandetron accelerator. The beam was collimated to a 500×500 µm2 cross section using programmable proxi…
MBU characterization of NAND-Flash memories under heavy-ion irradiation
2011
The angular dependence of the MBU-Cross-Section of two 8-Gbit-SLC-NAND-Flash and the orientation of the MBU-pattern has been measured.
Heavy Ion Sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM
2012
16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM memories have been tested under heavy ion irradiation. At high LET, 25nm NAND-Flash show MBUs at normal incidence. Techniques for SEFI mitigation in DDR3 SDRAM are studied.
Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes
2018
Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This letter demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation. Peer reviewed
Depth profiles of aggregate centers and nanodefects in LiF crystals irradiated with 34 MeV 84Kr, 56 MeV 40Ar and 12 MeV 12C ions
2018
I. Manika, J. Maniks and R. Zabels acknowledge the national project IMIS2. A. Dauletbekova, A. Akilbekov, M. Zdorovets and A. Seitbayev acknowledge the GF AP05134257of Ministry of Education and Science the Republic of Kazakhstan.
Effect of ion irradiation on the stability of amorphous Ge2Sb2Te5 thin films
2008
The archival life of phase-change memories (PCM) is determined by the thermal stability of amorphous phase in a crystalline matrix. In this paper, we report the effect of ion beam irradiation on the crystallization kinetics of amorphous Ge2Sb2Te5 alloy (GST). The transition rate of amorphous GST films was measured by in situ time resolved reflectivity (TRR). The amorphous to crystal transformation time decreases considerably in irradiated amorphous GST samples when ion fluence increases. The stability of amorphous Ge2Sb2Te5 thin films subjected to ion irradiation is discussed in terms of the free energy variation of the amorphous state because of damage accumulation. © 2008 Elsevier B.V. Al…
Micro-Raman analysis of the fuel-cladding interface in a high burnup PWR fuel rod
2017
International audience; New insights on the fuel-cladding bonding layer in high burnup nuclear fuel were obtained using micro-Raman spectroscopy. A specimen was specifically prepared from a fuel rod which had been irradiated to an average burnup of 56 GWd.tU-1 in a pressurized water reactor (PWR). Both inner and outer corrosion scale regions were investigated. A 10-15 et956;m thick zirconia bonding layer between fuel and cladding materials which consisted of three distinct regions was observed. Close to the fuel, tetragonal, then monoclinic zirconia was identified as the main phases. Close to the bonding layer-cladding interface, peculiar Raman signals were observed. Similar signals were ob…
Current-induced domain wall motion in nanoscale ferromagnetic elements
2011
The manipulation of a magnetic domain wall (DW) by a spin polarized current in ferromagnetic nanowires has attracted tremendous interest during the last years due to fundamental questions in the fields of spin dependent transport phenomena and magnetization dynamics but also due to promising applications, such as DW based magnetic memory concepts and logic devices. We comprehensively review recent developments in the field of geometrically confined domain walls and in particular current induced DW dynamics. We focus on the influence of the magnetic and electronic transport properties of the materials on the spin transfer effect in DWs. After considering the different DW structures in ferrom…